Analogue quantum simulation with Coulomb-confined quantum dots in silicon

Recent demonstrations of few semiconductor quantum dot systems for analogue quantum simulation of the Fermi-Hubbard model due to the inherent ability of quantum dots show tremendous promise for exploring highly interacting electron systems. Phosphorus-doped silicon quantum dots created from the Coulombic potential of the donors have large electron-electron interactions and large kinetic energy terms compared to the temperature of the system. Additionally, these Coulomb-confined quantum dots require significantly lower control structures and can be fabricated with sub-nanometre precision using a scanning tunneling microscope (STM). In this talk, I will describe the features of Coulomb-confined quantum dots in silicon that make them promising for large-scale quantum simulation and present our recent demonstration of the interacting Su-Schrieffer-Heeger (SSH) model using Si:P quantum dots. Finally, by leveraging the low-gate density and sub-nanometre fabrication accuracy I will show how these Coulomb-confined quantum dots can be used for large-scale quantum simulation of the extended Fermi-Hubbard model.